Intellectual Property India Publishes Patent Application for ‘Thermoelectric Device, Electrode Materials and Method for Fabrication Thereof’ Filed by Corning, Shanghai Institute of Ceramics, Chinese Academy of Sciences

MUMBAI, India, March 7 — Intellectual Property India has published a patent application (7147/DELNP/2011 A) filed by Corning Inc., New York, U.S., and Shanghai Institute of Ceramics, Chinese Academy of Sciences on Sept. 19, 2011 for a ‘thermoelectric device, electrode materials and method for fabrication thereof.’

The application for the patent – which was invented by Lidong Chen, Monika Backhaus-Ricoult, Lin He, Xiaoya Li, Xugui Xia and Degang Zhao – was published on Feb. 8 under issue no. 06/2013. According to the abstract released by the Intellectual Property India: “A thermoelectric device, a method for fabricating a thermoelectric device and electrode materials applied to the thermoelectric device are provided according to the present invention. The present invention is characterized in arranging thermoelectric material powder, interlayer materials and electrode materials in advance according to the structure of thermoelectric device; adopting one-step sintering method to make a process of forming bulked thermoelectric materials and a process of combining with electrodes on the devices to be completed simultaneously; and obtaining a n shape thermoelectric device finally. Electrode materials related to the present invention comprise binary or ternary alloys or composite materials, which comprise at least a first metal selected from Cu, Ag, Al or Au, and a second metal selected from Mo, W, Zr, Ta, Cr, Nb, V or Ti. The present invention simplifies fabricating procedures, reduces the cost and avoids adverse impacts due to exposing related elements to heat and pressure for a second time.” The patent application was internationally filed on March 25, 2010 under International application No. PCT/US2010/028615.


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